科研项目：

[1]深圳市战略性新兴产业发展专项资金项目:InN纳米棒的低能离子束溅射制备、掺杂及性能研究,JCYJ20120613102126217，深圳市，2012.11-2014.9

[2]深圳市科技研发资金：纳米线径向非周期的不稳定性机理的研究，JC201005280405A, 2011.3-2012.12

[3]广东省自然科学基金：离子束溅射制备氮化铟纳米棒及离子处理对其性能影响的研究，7301361，2007.10-2009.10

科研论文：

[1]Fan Ye, Jun-Jie Zeng, Yi-Bin Qiu, Xing-Min Cai*, Bo Wang, Huan Wang, Dong-Ping Zhang, Ping Fan and V.A.L. Roy, Deposition-rate controlled nitrogen-doping into cuprous oxide and its thermal stability, Thin Solid Films, 674,2019,44-51.

[2]Fan Ye, Jun-Jie Zeng, Yi-Bin Qiu, Xing-Min Cai*, Bo Wang, Huan Wang, Dong-Ping Zhang, Ping Fan, Yi-Zhu Xie, Xiu-Fang Ma and Fan Wang, The optical and electrical properties of nitrogen-doped cuprous oxide annealed at different temperatures, Surface and Coating Technology, 359, 2019, 360-365.

[3]Xing-Min Cai, Bo Wang, Fan Ye*, Jun-Jie Zeng, Karthikeyan Vaithinathan, Fan Wang, Xiu-Fang Ma, Yi-Zhu Xie, Dong-Ping Zhang, Ping Fan and V.A.L. Roy, Fabricating ZnSnN₂ with cosputtering, Surface and Coating Technology, 359, 2019, 169-174.

[4]Xing-Min Cai, Bo Wang, Fan Ye*, Karthikeyan Vaithinathan, Jun-Jie Zeng, Dong-Ping Zhang, Ping Fan, V.A.L. Roy, Tuning the photoluminescence, conduction mechanism and scattering mechanism of ZnSnN₂,  Journal of Alloys and Compounds 779(2019)237-243.

[5]Xing-Min Cai, Xiao-Qiang Su, Fan Ye*, V.A.L. Roy, Dong-Ping Zhang, Jing-Ting Luo, Ping Fan, Zhuang-Hao Zheng, Guang-Xing Liang, Jun-Jun Xiao, Fabrication and properties of pure-phase Cu₂O co-doped with zinc and indium,   Journal of Alloys and Compounds, Volume 697, 2017, Pages 5-10.

[6]F. Ye, Xiao-Qiang Su, Xing-Min Cai*,  Zhuang-Hao Zheng, Guang-Xing Liang, Dong-Ping Zhang, Jing-Ting Luo and Ping Fan, The electrical and thermoelectric properties of Zn-doped cuprous oxide, Thin Solid Films,  603 (2016) 395-399.

[7]蔡兴民， 苏小强，叶凡*，王欢，梁广兴，郑壮豪，罗景庭，张东平，范平，AlGaN 纳米线的化学气相沉积制备及表征， 深圳大学学报（理工版），2015，32（6）， 638-644.

[8]X.M. Cai, X.Q. Su, F. Ye*, H. Wang, X.Q. Tian, D.P. Zhang, P. Fan, J.T. Luo, Z.H. Zheng, G.X. Liang and V.A.L. Roy, “The n-type conduction of indium-doped Cu2O thin films fabricated by direct current magnetron co-sputtering”, Applied Physics Letters, 2015, 107(8), 083901-1-083901-5.

[9]Fan Ye, Xing-Min Cai*, Xue Zhong, Huan Wang, Xiao-Qing Tian, Dong-Ping Zhang, Ping Fan, Jing-Ting Luo, Zhuang-Hao Zheng, Guang-Xing Liang, The role of Ga in the chemical vapor deposition growth of ternary Al_xGa_1-xN nanowires, Journal of Alloys and Compounds, Vol.620, 2015, 87-90.

[10]Fan Ye, Xing-Min Cai*, Xue Zhong, Xiao-Qing Tian, Shou-Yong Jing, Long-Biao Huang, V.A.L.Roy, Dong-Ping Zhang, Ping Fan, Jing-Tin Luo, Zhuang-Hao Zheng, Guang-Xing Liang, The electrical and optical properties of Cu-doped In₂O₃ thin films, Thin Solid Films, Vol.556, 2014, 44-47.

[11]Fan Ye, Xue Zhong, Xing-Min Cai*, Long-Biao Huang, V. A. L. Roy, Shou-Yong Jing, Dong-Ping Zhang, Ping Fan, Jing-Ting Luo, Xiao-Qing Tian, Structural, electrical, and optical properties of Zn_1-xSn_xO thin films, Phys. Status Solidi A, Vol. 210 (11), 2013, 2404–2408.

[12]Fan Ye, Xing-Min Cai*, Fu-Ping Dai, Shou-Yong Jing, Dong-Ping Zhang, Ping Fan and Li-Jun Liu，The field emission of Cu-doped ZnO, Physical  Status Solidi B, Vol.249(3),2012,596-599.

[13]Fan Ye, Xing-Min Cai*, Fu-Ping Dai, Dong-Ping Zhang, Ping Fan and Li-Jun Liu, The field emission of indium-doped ZnO films fabricated by room temperature DC magnetron sputtering, Physica B, 407 (2012) 64-67.

[14]Fan Ye, Xing-Min Cai*, Fu-Ping Dai, Shou-Yong Jing , Dong-Ping Zhang, Ping Fan, Li-Jun Liu, Cu–In–O composite thin films deposited by reactive DC magnetron sputtering, Physica B, Vol.406(3), 2011, Pages 516–519.

[15]Fan Ye, Xing-Min Cai*, Ping Fan,Dong-Ping Zhang, Li-Jun Liu, The effect of annealing on the electrical and optical properties of Cu-In-O thin films, Advanced Materials Research, Vol.287-290, 2011, Pages 2125-2130.

[16]Xing-Min Cai*, Fan Ye, Yan-Qing Hao, Dong-Ping Zhang, Zhe-Huang Zhang, Ping Fan, The properties of direct current sputtering deposited InN thin films under different gas flow rates, Journal of Alloys and Compounds, Vol.484(1-2), 2009, Pages 677-681.

[17]Xing-Min Cai*, Yan-Qing Hao, Dong-Ping Zhang, Ping Fan, Direct current magnetron      sputtering deposition of InN thin films, Applied Surface Science, Vol.256(1), 2009, Pages 43-45.

[18]X.M. Cai*, F. Ye, S. Y. Jing, D.P. Zhang, P. Fan, E. Q. Xie, CVD growth of InGaN nanowires, Journal of Alloys and Compounds, Vol.467(1-2), 2009, Pages 472-476.

[19]X.M. Cai*, F. Ye, S. Y. Jing, D.P. Zhang, P. Fan, E. Q. Xie, A systematic study of CVD growth of InN, Applied Surface Science, Vol.255(5), 2008, Pages 2153-2158.

[20]X.M. Cai*, F. Ye, E.Q. Xie, D.P. Zhang, P. Fan,Field electron emission from HfNxOy thin films deposited by direct current sputtering, Applied Surface Science, Vol.254(10), 2008, Pages 3074-3077.

[21]X.M. Cai*, F. Ye, E.Q. Xie, D.P. Zhang, P. Fan, Effect of N₂ ambient annealing on the field emission properties of HfN_xO_y thin films, Appl. Phys. A. Vol.90(3), 2008, Pages 555-558.

[22]X.M. Cai, A. B. Djurišić*, M. H. Xie, Growth of hexagonal and cubic InN nanorods, Materials Letters, Vol.61(7) 2007, Pages 1563-1566

[23]X.M. Cai, A. B. Djurišić*, M. H. Xie, C. L. Wu, S. Gwo, GaN nanowires: CVD Synthesis and Properties, Thin Solid Films, Vol.515(3), 2006, Pages 984-989.

[24]X.M. Cai, Y. H. Leung, K. Y. Cheung, K. H. Tam, A. B. Djurišić*, M. H. Xie, H. Y. Chen and S. Gwo, Straight and helical InGaN nanowire core/shell structures with high In core content, Nanotechnology, Vol.17(9), 2006, Page 2330-2333.

[25]X.M. Cai, A.B. Djurišić, M.H. Xie, H. Liu, X.X. Zhang, J.J. Zhu and H. Yang, Ferromagnetism in Mn and Cr doped GaN by thermal diffusion, Materials Science and Engineering:B, Vol.117(3), 2005, Pages292-295.

[26]X.M. Cai, K. W. Cheng, C. C. Oey, A. B. Djurišić*, W. K. Chan, M. H. Xie, and P. C. Chui, Porous metallic films fabricated by self-assembly of gold nanoparticles, Thin Solid Films, Vol.491(1-2), 2005, Pages66-70.

[27]X.M. Cai, A.B. Djurišić, M.H. Xie, Growth of SiO_x nanowire bunches co-catalyzed with Ga and Ni, Journal of Applied Physics, Vol.98(7), 2005, Page 074313-1~-5 (also selected for Virtual Journal of Nanoscale Science & Technology, Vol.12(17), 2005).

[28]X.M. Cai, A.B. Djurišić, M.H. Xie*, S. Gwo, C.L. Wu, Growth mechanism of stacked-cone and smooth-surface GaN nanowires, Applied Physics Letters, Vol.87(18), 2005, Page 183103-1~-3(该期封面文章).

专利发明：

[1] 蔡兴民等，一种ZnSnN2薄膜及其制备方法，申请号：CN201711330330.7。